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| BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage (car radio) Monolitic chip (common cathode) for perfect dual diode tracking Good C- V linearity High figure of merit BB844 3 D1 D2 1 2 Type BB844 Package SOT23 Configuration common cathode LS (nH) Marking 1.8 SNs Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg Value 18 20 50 -55 ... 150 -55 ... 150 Unit V mA C 1 Nov-07-2002 BB844 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 C AC Characteristics Diode capacitance VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA 20 200 typ. - IR - pF 42.5 25 10 43.75 27 11.5 3.8 0.28 45 29 13 1.5 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz VR = 2V to 8V , f = 1 MHz CT2 /CT8 CT/CT 3.2 - VR = 2 V, f = 100 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 Series resistance Capacitance matching1) rS BB844 Diode capacitance CT = f = 1MHz f = 1MHz 5 90 pF CTref/C T 70 60 50 4 3.5 3 2.5 CT1V/CT CT 40 2 30 20 10 0 -1 10 0 1 2 1.5 CT8V/CT 1 0.5 V 10 10 10 0 0 1 2 3 4 5 6 VR Temperature coefficient of the diode 0.0006 1/C 0.0005 TCc 0.00045 0.0004 0.00035 0.0003 0.00025 0.0002 1 2 3 4 capacitance TCc = (VR) 5 6 7 8 V 10 VR 3 Nov-07-2002 7 (VR ) Capacitance ratio CTref /CT = (VR ) CT2V/CT 8 V 10 VR |
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